OCZ’s latest solid state drive is the Vertex 4 and unlike many of the solid state drive we have seen this year it is not powered by the SandForce SF-2281 controller. Instead it is using the Indilinx Everest 2 platform. The Vertex 4 is the first consumer drive to use the Everest 2 platform and boasts speeds of 560MB/s read and 510MB/s write! It is definitely set to compete with SandForce drives! Read on to check out our unboxing video where we give you an overview of the drive and open it up so you can get a closer look at the Everest 2 platform!
Product Link: Click Here
Provided By: OCZ
Information: As the fourth generation of the legendary Vertex family, the Vertex 4 Series pushes storage performance to the max and redefines the modern day computing experience. Vertex 4 SSDs are innovatively engineered to deliver industry-leading file transfer rates and superior system responsiveness, all while providing a more durable, reliable, and energy efficient storage solution compared to traditional hard drives. Designed to take full advantage of the SATA III interface, the Vertex 4 unleashes ultimate productivity, gaming, and multimedia applications.
Industry’s highest IOPs performance up to 120,000
Incredible performance in workstation and heavy-duty environments with multiple data threads
No compression-related performance limitations
Better performance with “real world” data streams of varying “compressibility” as well as fully incompressible data such as videos and multimedia files, encrypted data, archive files such as .ZIP files and software.
Indilinx InfusedTM Everest 2 platform
Leading edge dual-ARM controller architecture enables faster performance like nothing else you’ve experienced.
Fast boot times and ultra-low latency
Boot up in as little as 9 seconds, and industry-low latencies of .04 reads and .02 writes enable superior multitasking and flawless performance
Industry-leading 5 year warranty
Backed by OCZ’s renowned service for ultimate peace of mind.
Ndurance 2.0 Technology
Advanced suite of NAND Flash management to increase durability and reliability to expand the NAND’s lifespan
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