Micron Technology, Inc. today introduced the industry’s smallest 128-gigabit (Gb) NAND flash memory device utilizing its award-winning 20-nanometer (nm) process technology. The new 128Gb device stores three bits of information per cell, called triple-level-cell (TLC), creating a highly compact storage solution. Measuring 146mm2, the new 128Gb TLC device is more than 25 percent smaller than the same capacity of Micron’s 20nm multi-level-cell (MLC) NAND device. The 128Gb TLC device is targeted at the cost-competitive removable storage market (flash cards and USB drives), which is projected to consume 35 percent of total NAND gigabytes in calendar 2013. Micron is now sampling the 128Gb TLC NAND device with select customers; it will be in production in calendar Q2.
Micron Technology, Inc., one of the world’s leading providers of advanced semiconductor solutions, and TE Connectivity (TE), a world leader in connectivity, announced today the availability of a Single-Sided SODIMM and a low-profile single-sided, double data rate 3 (DDR3) SODIMM connector solution to take advantage of the burgeoning market for Ultrabook devices, convertibles, tablets and other thin and light devices.
The night before CES actually starts, media company Pepcom holds an annual event called “Digital Experience.” This event showcases some of the newest technology coming to market, some of it announced at the event or shortly before it. I toured Digital Experience — this year with an Area 51 alien invasion theme — and present herein some of the great finds.
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